From 7a630eb638d02b0e4fed09509860d728f82d143f Mon Sep 17 00:00:00 2001 From: RaWa Date: Thu, 27 Jun 2019 10:06:34 +0200 Subject: [PATCH] typo? --- process_chemistry/chemistry_etching.tex | 2 +- 1 file changed, 1 insertion(+), 1 deletion(-) diff --git a/process_chemistry/chemistry_etching.tex b/process_chemistry/chemistry_etching.tex index 9a0d7c2..2dcd6ea 100644 --- a/process_chemistry/chemistry_etching.tex +++ b/process_chemistry/chemistry_etching.tex @@ -8,7 +8,7 @@ \section{Etching silicon dioxide} \end{itemize} This can be prepared, for example, by mixing 113 g of $NH_4F$ in 170 ml of $H_2O$, and adding 28 ml of HF.\\ The etch rate at room temperature can range from 1000 to 2500 \r{A}/min (100-250nm/min). -This depends on the actual density of the oxide which, as an amorphous layer, can have a more compact structure (if thermally grown in is oxygen) or less compact (if grown by CVD). +This depends on the actual density of the oxide which, as an amorphous layer, can have a more compact structure (if thermally grown in oxygen) or less compact (if grown by CVD). The following etching reaction holds: \begin{equation} SiO_2 + 6HF \rightarrow H_2SiF_6 + H_2O